onsemi
FGH60T65SQD-F155
IGBTs 650V 60A FS4 TRENCH
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- IGBTs
- Series
- FGH60T65SQD-F155
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
14 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.6 V
- Maximum Gate Emitter Voltage
- - 20 V, 20 V
- Continuous Collector Current at 25 C
- 120 A
- Pd - Power Dissipation
- 333 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Country of Assembly
- CN
- Country of Diffusion
- CZ
- Country of Origin
- CN
Show more parameters (2)
- Gate-Emitter Leakage Current
- 400 nA
- Unit Weight
- 0.290411 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.