IXYS
IXTA20N65X
MOSFET 650V/9A Power MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- MOSFET
- Series
- X-Class
- Package
- TO-263-3
- Mounting Style
- SMD/SMT
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
21 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Id - Continuous Drain Current
- 20 A
- Rds On - Drain-Source Resistance
- 210 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 3 V
- Vgs - Gate-Source Voltage
- 30 V
- Qg - Gate Charge
- 35 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 320 W
Show more parameters (9)
- Configuration
- Single
- Channel Mode
- Enhancement
- Tradename
- HiPerFET
- Forward Transconductance - Min
- 9 S
- Fall Time
- 22 ns
- Rise Time
- 30 ns
- Typical Turn-Off Delay Time
- 46 ns
- Typical Turn-On Delay Time
- 18 ns
- Unit Weight
- 0.068654 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.