Vishay Semiconductors
SIDR608EP-T1-RE3
MOSFETs N-CHANNEL 45-V (D-S) 175C MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay Semiconductors
- Product Category
- MOSFETs
- Series
- SIDR
- Package
- PowerPAK SO-8
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
20 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 40 V
- Id - Continuous Drain Current
- 228 A
- Rds On - Drain-Source Resistance
- 1.36 mOhms
- Vgs - Gate-Source Voltage
- - 16 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2.3 V
- Qg - Gate Charge
- 167 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 125 W
Show more parameters (8)
- Channel Mode
- Enhancement
- Configuration
- Single
- Country of Origin
- TW
- Fall Time
- 25 ns
- Forward Transconductance - Min
- 120 S
- Rise Time
- 86 ns
- Typical Turn-Off Delay Time
- 50 ns
- Typical Turn-On Delay Time
- 52 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.