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Toshiba

XSM6J372NW,LXHF

MOSFETs P-ch MOSFET, -30 V, -6.0 A, 0.042Ohma.10V, DFN2020B(WF)Automotive

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Product Category
MOSFETs
Package
DFN2020B-6
Mounting Style
SMD/SMT
Packaging
Cut Tape

Technical Specifications

17 parameters
Technology
Si
Transistor Polarity
P-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
24 A
Rds On - Drain-Source Resistance
144 mOhms
Vgs - Gate-Source Voltage
- 12 V, 6 V
Vgs th - Gate-Source Threshold Voltage
1.2 V
Qg - Gate Charge
8.2 nC
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
3.3 W
Channel Mode
Enhancement
Show more parameters (5)
Configuration
Single
Country of Origin
JP
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
75 ns
Typical Turn-On Delay Time
15 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

XSM6J372NW,LXHF Specifications and Datasheet | ChipSourceHub