onsemi
NTHL020N090SC1
SiC MOSFETs 20MOHM 900V
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- SiC MOSFETs
- Series
- NTHL020N090SC1
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
22 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 900 V
- Id - Continuous Drain Current
- 118 A
- Rds On - Drain-Source Resistance
- 28 mOhms
- Vgs - Gate-Source Voltage
- - 8 V, + 22 V
- Vgs th - Gate-Source Threshold Voltage
- 4.3 V
- Qg - Gate Charge
- 196 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 503 W
- Channel Mode
- Enhancement
Show more parameters (10)
- Tradename
- EliteSiC
- Configuration
- Single
- Country of Origin
- CN
- Fall Time
- 13 ns
- Forward Transconductance - Min
- 49 S
- Rise Time
- 63 ns
- Technology
- SiC
- Typical Turn-Off Delay Time
- 55 ns
- Typical Turn-On Delay Time
- 40 ns
- Unit Weight
- 0.211644 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.