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onsemi

NTMFS6H800NT1G

MOSFETs TRENCH 8 80V NFET POWER MOSFET

Basic Information

View Datasheet ↗
Manufacturer
onsemi
Product Category
MOSFETs
Series
NTMFS6H800N
Package
SOIC-8
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

24 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
80 V
Id - Continuous Drain Current
203 A
Rds On - Drain-Source Resistance
1.8 mOhms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
2 V
Qg - Gate Charge
85 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
200 W
Show more parameters (12)
Channel Mode
Enhancement
Configuration
Single
Country of Assembly
MY
Country of Diffusion
JP
Country of Origin
MY
Fall Time
85 ns
Forward Transconductance - Min
138 S
Rise Time
89 ns
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
97 ns
Typical Turn-On Delay Time
25 ns
Unit Weight
0.026455 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NTMFS6H800NT1G Specifications and Datasheet | ChipSourceHub