Vishay
SIR122LDP-T1-RE3
MOSFETs PPAKSO8 N-CH 80V 17.2A
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Product Category
- MOSFETs
- Series
- SIR
- Package
- SO-8
- Mounting Style
- SMD/SMT
Technical Specifications
18 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 80 V
- Id - Continuous Drain Current
- 62.3 A
- Rds On - Drain-Source Resistance
- 7.35 mOhms
- Vgs - Gate-Source Voltage
- - 20 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
- Qg - Gate Charge
- 34.6 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Channel Mode
- Enhancement
Show more parameters (6)
- Country of Origin
- CN
- Fall Time
- 6 ns
- Forward Transconductance - Min
- 67 S
- Rise Time
- 26 ns
- Typical Turn-Off Delay Time
- 27 ns
- Typical Turn-On Delay Time
- 25 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.