Vishay / Siliconix
SQ4920EY-T1_GE3
MOSFET 30V 8A 4.4W AEC-Q101 Qualified
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay / Siliconix
- Product Category
- MOSFET
- Series
- SQ
- Package
- SO-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
26 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Id - Continuous Drain Current
- 8 A
- Rds On - Drain-Source Resistance
- 13 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1.5 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 30 nC, 30 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 4.4 W
Show more parameters (14)
- Configuration
- Dual
- Channel Mode
- Enhancement
- Qualification
- AEC-Q101
- Tradename
- TrenchFET
- Height
- 1.75 mm
- Length
- 4.9 mm
- Transistor Type
- 2 N-Channel
- Width
- 3.9 mm
- Forward Transconductance - Min
- 43 S, 43 S
- Fall Time
- 8 ns, 8 ns
- Rise Time
- 10 ns, 10 ns
- Typical Turn-Off Delay Time
- 25 ns, 25 ns
- Typical Turn-On Delay Time
- 7 ns, 7 ns
- Unit Weight
- 0.017870 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.