Renesas Electronics
RJK5015DPM-00#T1
MOSFET Power MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Renesas Electronics
- Product Category
- MOSFET
- Series
- RJK5015
- Package
- TO-3PFM-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
19 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 500 V
- Id - Continuous Drain Current
- 25 A
- Rds On - Drain-Source Resistance
- 240 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 3 V
- Vgs - Gate-Source Voltage
- 30 V
- Qg - Gate Charge
- 66 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 60 W
Show more parameters (7)
- Configuration
- Single
- Channel Mode
- Enhancement
- Fall Time
- 45 ns
- Moisture Sensitive
- Yes
- Rise Time
- 59 ns
- Typical Turn-On Delay Time
- 42 ns
- Unit Weight
- 0.194007 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.