Infineon Technologies
IKD04N60RATMA1
IGBT Transistors IGBT w/ INTG DIODE 600V 8A
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- IGBT Transistors
- Series
- RC
- Package
- TO-252-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 1.65 V
- Maximum Gate Emitter Voltage
- 20 V
- Continuous Collector Current at 25 C
- 8 A
- Pd - Power Dissipation
- 75 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 175 C
- Gate-Emitter Leakage Current
- 100 nA
- Tradename
- TRENCHSTOP
- Part # Aliases
- IKD04N60R SP000964626
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.