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onsemi

FQD13N10LTM

MOSFETs 100V N-Ch QFET Logic Level

Basic Information

View Datasheet ↗
Manufacturer
onsemi
Product Category
MOSFETs
Series
13N10L
Package
DPAK-3 (TO-252-3)
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

22 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
100 V
Id - Continuous Drain Current
10 A
Rds On - Drain-Source Resistance
180 mOhms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
2 V
Qg - Gate Charge
8.7 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
2.5 W
Show more parameters (10)
Channel Mode
Enhancement
Configuration
Single
Country of Origin
CN
Fall Time
72 ns
Forward Transconductance - Min
8.7 S
Rise Time
220 ns
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
22 ns
Typical Turn-On Delay Time
7.5 ns
Unit Weight
0.011640 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

FQD13N10LTM Specifications and Datasheet | ChipSourceHub