Toshiba
SSM3J355R,LF
MOSFET LowON Res MOSFET ID=-6A VDSS=-20V
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- MOSFET
- Series
- SSM3J355R
- Package
- SOT-23F-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Id - Continuous Drain Current
- 6 A
- Rds On - Drain-Source Resistance
- 23 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1 V
- Vgs - Gate-Source Voltage
- 10 V
- Qg - Gate Charge
- 16.6 nC
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 2 W
- Configuration
- Single
Show more parameters (6)
- Channel Mode
- Enhancement
- Tradename
- U-MOSVII
- Transistor Type
- 1 P-Channel
- Forward Transconductance - Min
- 12.8 S
- Typical Turn-Off Delay Time
- 320 ns
- Typical Turn-On Delay Time
- 30 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.