onsemi
FGY120T65SPD-F085
IGBTs 650V FS Trench IGBT Gen3
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- IGBTs
- Series
- FGY120T65S_F085
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
15 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.5 V
- Maximum Gate Emitter Voltage
- - 20 V, 20 V
- Continuous Collector Current at 25 C
- 240 A
- Pd - Power Dissipation
- 882 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Qualification
- AEC-Q101
- Continuous Collector Current Ic Max
- 240 A
- Country of Origin
- CN
Show more parameters (3)
- Gate-Emitter Leakage Current
- 250 nA
- Part # Aliases
- FGY120T65SPD_F085
- Unit Weight
- 0.215171 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.