Infineon Technologies
BSS169H6906XTSA1
MOSFET SMALL SIGNAL N-CH
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Series
- BSS169
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
27 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 90 mA
- Rds On - Drain-Source Resistance
- 12 Ohms
- Vgs th - Gate-Source Threshold Voltage
- 2.9 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 2.8 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 360 mW
Show more parameters (15)
- Configuration
- Single
- Channel Mode
- Depletion
- Height
- 1.1 mm
- Length
- 2.9 mm
- Product
- MOSFET Small Signal
- Transistor Type
- 1 N-Channel
- Type
- SIPMOS Small Signal Transistor
- Width
- 1.3 mm
- Forward Transconductance - Min
- 0.1 S
- Fall Time
- 27 ns
- Rise Time
- 2.7 ns
- Typical Turn-Off Delay Time
- 11 ns
- Typical Turn-On Delay Time
- 2.9 ns
- Part # Aliases
- BSS169 H6906 SP000702582
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.