ChipSourceHub

onsemi

NVMFD027N10MCLT1G

MOSFETs PTNG 100V LL SO8FL DUAL

Basic Information

View Datasheet ↗
Manufacturer
onsemi
Product Category
MOSFETs
Series
NVMFD027N10MCL
Package
DFN-8
Mounting Style
SMD/SMT
Packaging
Cut Tape

Technical Specifications

21 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
2 Channel
Vds - Drain-Source Breakdown Voltage
100 V
Id - Continuous Drain Current
138 A
Rds On - Drain-Source Resistance
35 mOhms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
3 V
Qg - Gate Charge
11 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
164 W
Show more parameters (9)
Channel Mode
Enhancement
Configuration
Dual
Country of Origin
MY
Fall Time
3.2 ns
Forward Transconductance - Min
27 S
Rise Time
2.5 ns
Transistor Type
2 N-Channel
Typical Turn-Off Delay Time
19 ns
Typical Turn-On Delay Time
7 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NVMFD027N10MCLT1G Specifications and Datasheet | ChipSourceHub