Diodes Incorporated
DMP45H4D9HJ3
MOSFET MOSFETBVDSS: 251V-500V
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- MOSFET
- Package
- TO-251-3
- Mounting Style
- Through Hole
- RoHS
- Compliant (source record)
Technical Specifications
20 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 450 V
- Id - Continuous Drain Current
- 4.6 A
- Rds On - Drain-Source Resistance
- 3.1 Ohms
- Vgs th - Gate-Source Threshold Voltage
- 5 V
- Vgs - Gate-Source Voltage
- 30 V
- Qg - Gate Charge
- 13.7 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 104 W
Show more parameters (8)
- Configuration
- Single
- Channel Mode
- Enhancement
- Transistor Type
- 1 P-Channel
- Fall Time
- 31 ns
- Rise Time
- 40 ns
- Typical Turn-Off Delay Time
- 32 ns
- Typical Turn-On Delay Time
- 19 ns
- Unit Weight
- 0.011640 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.