Microchip / Microsemi
APT45GP120BG
IGBT Transistors FG, IGBT, 1200V, 45A, TO-247, RoHS
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip / Microsemi
- Product Category
- IGBT Transistors
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 1.2 kV
- Collector-Emitter Saturation Voltage
- 3.3 V
- Maximum Gate Emitter Voltage
- 30 V
- Continuous Collector Current at 25 C
- 100 A
- Pd - Power Dissipation
- 625 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current Ic Max
- 100 A
- Height
- 5.31 mm
- Length
- 21.46 mm
Show more parameters (6)
- Operating Temperature Range
- - 55 C to + 150 C
- Width
- 16.26 mm
- Continuous Collector Current
- 100 A
- Gate-Emitter Leakage Current
- 100 nA
- Tradename
- POWER MOS 7 IGBT
- Unit Weight
- 1.340411 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.