Texas Instruments
CSD23202W10T
MOSFET 12V PCH NexFET
Basic Information
View Datasheet ↗- Manufacturer
- Texas Instruments
- Product Category
- MOSFET
- Series
- CSD23202W10
- Package
- DSBGA-4
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
23 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 12 V
- Id - Continuous Drain Current
- 2.2 A
- Rds On - Drain-Source Resistance
- 92 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 600 mV
- Vgs - Gate-Source Voltage
- 6 V
- Qg - Gate Charge
- 2.9 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 1 W
Show more parameters (11)
- Configuration
- Single
- Tradename
- NexFET
- Height
- 0.62 mm
- Length
- 1 mm
- Transistor Type
- 1 P-Channel
- Width
- 1 mm
- Fall Time
- 21 ns
- Rise Time
- 4 ns
- Typical Turn-Off Delay Time
- 58 ns
- Typical Turn-On Delay Time
- 9 ns
- Unit Weight
- 0.000032 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.