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onsemi

NVHL023N065M3S

SiC MOSFETs SIC MOS TO247-3L 23MOHM 650V M3S

Basic Information

View Datasheet ↗
Manufacturer
onsemi
Product Category
SiC MOSFETs
Series
NVHL023N065M3S
Package
TO-247-3
Mounting Style
Through Hole
Packaging
Tube

Technical Specifications

20 parameters
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
650 V
Id - Continuous Drain Current
70 A
Rds On - Drain-Source Resistance
33 mOhms
Vgs - Gate-Source Voltage
- 8 V, + 22 V
Vgs th - Gate-Source Threshold Voltage
4 V
Qg - Gate Charge
69 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
263 W
Channel Mode
Enhancement
Show more parameters (8)
Configuration
Single
Country of Origin
CN
Fall Time
11 ns
Rise Time
30 ns
Technology
SiC
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
38 ns
Typical Turn-On Delay Time
12 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NVHL023N065M3S Specifications and Datasheet | ChipSourceHub