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Diodes Incorporated

DMT4003SCT

MOSFET MOSFET BVDSS: 31V-40V

Basic Information

View Datasheet ↗
Manufacturer
Diodes Incorporated
Product Category
MOSFET
Package
TO-220AB-3
Mounting Style
Through Hole
Packaging
Tube

Technical Specifications

19 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
40 V
Id - Continuous Drain Current
205 A
Rds On - Drain-Source Resistance
3 mOhms
Vgs th - Gate-Source Threshold Voltage
2 V
Vgs - Gate-Source Voltage
20 V
Qg - Gate Charge
75.6 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
156 W
Show more parameters (7)
Configuration
Single
Channel Mode
Enhancement
Fall Time
15.8 ns
Rise Time
41.2 ns
Typical Turn-Off Delay Time
34.4 ns
Typical Turn-On Delay Time
13.4 ns
Unit Weight
0.079014 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

DMT4003SCT Specifications and Datasheet | ChipSourceHub