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Vishay Semiconductors

SIA461DJ-T1-GE3

MOSFETs -20V Vds 8V Vgs PowerPAK SC-70

Basic Information

View Datasheet ↗
Manufacturer
Vishay
Brand
Vishay Semiconductors
Product Category
MOSFETs
Series
SIA
Package
SC-70-6
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

24 parameters
Technology
Si
Transistor Polarity
P-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
20 V
Id - Continuous Drain Current
12 A
Rds On - Drain-Source Resistance
33 mOhms
Vgs - Gate-Source Voltage
- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage
400 mV
Qg - Gate Charge
18 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
17.9 W
Show more parameters (12)
Channel Mode
Enhancement
Tradename
TrenchFET, PowerPAK
Configuration
Single
Country of Origin
CN
Fall Time
20 ns
Forward Transconductance - Min
20 S
Rise Time
22 ns
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
50 ns
Typical Turn-On Delay Time
20 ns
Part # Aliases
SIA461DJ-GE3
Unit Weight
0.002141 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SIA461DJ-T1-GE3 Specifications and Datasheet | ChipSourceHub