Toshiba
SSM6J503NU,LF
MOSFET SM Sig P-CH MOS ID -6A -20V -8 VGSS
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- MOSFET
- Series
- SSM6J503
- Package
- UDFN6B-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Id - Continuous Drain Current
- 6 A
- Rds On - Drain-Source Resistance
- 89.6 mOhms
- Vgs - Gate-Source Voltage
- 8 V
- Pd - Power Dissipation
- 1 W
- Configuration
- Single
- Tradename
- U-MOSVI
- Height
- 0.75 mm
- Length
- 2 mm
Show more parameters (2)
- Transistor Type
- 1 P-Channel
- Width
- 2 mm
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.