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Diodes Incorporated

ZVN4306GTA

MOSFET N-Chnl 60V

Basic Information

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Manufacturer
Diodes Incorporated
Product Category
MOSFET
Series
ZVN4306
Package
SOT-223-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

24 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
60 V
Id - Continuous Drain Current
2.1 A
Rds On - Drain-Source Resistance
330 mOhms
Vgs th - Gate-Source Threshold Voltage
1.3 V
Vgs - Gate-Source Voltage
10 V
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
3 W
Configuration
Single
Show more parameters (12)
Channel Mode
Enhancement
Height
1.65 mm
Length
6.7 mm
Transistor Type
1 N-Channel
Type
FET
Width
3.7 mm
Forward Transconductance - Min
0.7 S
Fall Time
16 ns
Rise Time
25 ns
Typical Turn-Off Delay Time
30 ns
Typical Turn-On Delay Time
8 ns
Unit Weight
0.003951 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

ZVN4306GTA Specifications and Datasheet | ChipSourceHub