Infineon Technologies
BSC16DN25NS3 G
MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Package
- PG-TDSON-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
24 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 250 V
- Id - Continuous Drain Current
- 10.9 A
- Rds On - Drain-Source Resistance
- 165 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 2 V
- Vgs - Gate-Source Voltage
- 10 V
- Qg - Gate Charge
- 8.6 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 62.5 W
Show more parameters (12)
- Configuration
- Single
- Channel Mode
- Enhancement
- Height
- 1.27 mm
- Length
- 5.9 mm
- Transistor Type
- 1 N-Channel
- Width
- 5.15 mm
- Forward Transconductance - Min
- 7 S
- Fall Time
- 4 ns
- Rise Time
- 4 ns
- Typical Turn-Off Delay Time
- 11 ns
- Typical Turn-On Delay Time
- 6 ns
- Part # Aliases
- BSC16DN25NS3GATMA1 BSC16DN25NS3GXT SP000781782
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.