Infineon Technologies
IPG20N04S412AATMA1
MOSFET MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Package
- TDSON-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
24 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 40 V
- Id - Continuous Drain Current
- 20 A
- Rds On - Drain-Source Resistance
- 12.2 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 2 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 18 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 41 W
Show more parameters (12)
- Configuration
- Dual
- Channel Mode
- Enhancement
- Qualification
- AEC-Q101
- Height
- 1.27 mm
- Length
- 5.9 mm
- Transistor Type
- 2 N-Channel
- Width
- 5.15 mm
- Fall Time
- 8 ns
- Rise Time
- 2 ns
- Typical Turn-Off Delay Time
- 10 ns
- Typical Turn-On Delay Time
- 9 ns
- Part # Aliases
- IPG20N04S4-12A SP000938098
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.