Vishay / Siliconix
SIA921EDJ-T1-GE3
MOSFET -20V Vds 12V Vgs PowerPAK SC-70
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay / Siliconix
- Product Category
- MOSFET
- Series
- SIA
- Package
- PowerPAK-SC70-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
26 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Id - Continuous Drain Current
- 4.5 A
- Rds On - Drain-Source Resistance
- 48 mOhms, 48 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1.4 V
- Vgs - Gate-Source Voltage
- 12 V
- Qg - Gate Charge
- 23 nC, 23 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 7.8 W
Show more parameters (14)
- Configuration
- Dual
- Channel Mode
- Enhancement
- Tradename
- TrenchFET, PowerPAK
- Height
- 0.75 mm
- Length
- 2.05 mm
- Transistor Type
- 2 P-Channel
- Width
- 2.05 mm
- Forward Transconductance - Min
- 11 S, 11 S
- Fall Time
- 10 ns, 10 ns
- Rise Time
- 20 ns, 20 ns
- Typical Turn-Off Delay Time
- 25 ns, 25 ns
- Typical Turn-On Delay Time
- 20 ns, 20 ns
- Part # Aliases
- SIA921EDJ-GE3
- Unit Weight
- 0.000988 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.