Toshiba
2SA1873-GR(TE85L,F
Bipolar Transistors - BJT -150mA -50V
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SA1873
- Package
- SOT-353-5
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- - 50 V
- Emitter- Base Voltage VEBO
- - 5 V
- Maximum DC Collector Current
- 0.15 A
- Gain Bandwidth Product fT
- 80 MHz
- Maximum Operating Temperature
- + 125 C
- DC Current Gain hFE Max
- 400
- Height
- 0.9 mm
- Length
- 2 mm
- Width
- 1.25 mm
Show more parameters (4)
- Continuous Collector Current
- - 150 mA
- DC Collector/Base Gain hfe Min
- 200
- Pd - Power Dissipation
- 200 mW
- Unit Weight
- 0.000212 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.