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Taiwan Semiconductor

TSM3481CX6

MOSFET 30V P channel MOSFET

Basic Information

View Datasheet ↗
Manufacturer
Taiwan Semiconductor
Product Category
MOSFET
Package
SOT-26-6
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

21 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
5.7 A
Rds On - Drain-Source Resistance
38 mOhms
Vgs th - Gate-Source Threshold Voltage
1 V
Vgs - Gate-Source Voltage
10 V
Qg - Gate Charge
18.09 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
1.6 W
Show more parameters (9)
Configuration
Single
Channel Mode
Enhancement
Transistor Type
1 P-Channel
Type
P-Channel
Forward Transconductance - Min
12 S
Fall Time
7.35 ns
Rise Time
4.43 ns
Typical Turn-Off Delay Time
42.81 ns
Typical Turn-On Delay Time
20.52 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

TSM3481CX6 Specifications and Datasheet | ChipSourceHub