Infineon Technologies
IPL60R299CP
MOSFET N-Ch 650V 11.1A ThinPAK-4 CoolMOS CP
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Series
- CoolMOS CE
- Package
- VSON-4
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
25 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 600 V
- Id - Continuous Drain Current
- 11.1 A
- Rds On - Drain-Source Resistance
- 299 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
- Vgs - Gate-Source Voltage
- 10 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 96 W
- Configuration
- Single
Show more parameters (13)
- Channel Mode
- Enhancement
- Tradename
- CoolMOS
- Height
- 1.1 mm
- Length
- 8 mm
- Transistor Type
- 1 N-Channel
- Width
- 8 mm
- Fall Time
- 5 ns
- Moisture Sensitive
- Yes
- Rise Time
- 5 ns
- Typical Turn-Off Delay Time
- 40 ns
- Typical Turn-On Delay Time
- 10 ns
- Part # Aliases
- IPL60R299CPAUMA1 IPL6R299CPXT SP000841896
- Unit Weight
- 0.006622 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.