IXYS
IXFN56N90P
MOSFET PolarHV HiPerFETs 900V 56A
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- MOSFET
- Series
- IXFN56N90
- Package
- SOT-227-4
- Mounting Style
- Chassis Mount
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
21 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 900 V
- Id - Continuous Drain Current
- 56 A
- Rds On - Drain-Source Resistance
- 135 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 6.5 V
- Vgs - Gate-Source Voltage
- 30 V
- Qg - Gate Charge
- 375 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 1 kW
Show more parameters (9)
- Configuration
- Single
- Tradename
- HiPerFET
- Transistor Type
- 1 N-Channel
- Forward Transconductance - Min
- 44 S
- Fall Time
- 38 ns
- Rise Time
- 80 ns
- Typical Turn-Off Delay Time
- 93 ns
- Typical Turn-On Delay Time
- 74 ns
- Unit Weight
- 1.058219 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.