IXYS
IXFR15N100Q3
MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/10A
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- MOSFET
- Series
- IXFR15N100
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 1 kV
- Id - Continuous Drain Current
- 10 A
- Rds On - Drain-Source Resistance
- 1.2 Ohms
- Vgs - Gate-Source Voltage
- 30 V
- Qg - Gate Charge
- 64 nC
- Pd - Power Dissipation
- 400 W
- Configuration
- Single
- Tradename
- HiPerFET
- Transistor Type
- 1 N-Channel
Show more parameters (2)
- Rise Time
- 250 ns
- Unit Weight
- 0.056438 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.