Microchip Technology
DN2535N5-G
MOSFET 350V 25Ohm
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip Technology
- Product Category
- MOSFET
- Package
- TO-220-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
22 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 350 V
- Id - Continuous Drain Current
- 500 mA
- Rds On - Drain-Source Resistance
- 25 Ohms
- Vgs - Gate-Source Voltage
- 20 V
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 15 W
- Configuration
- Single
- Channel Mode
- Depletion
Show more parameters (10)
- Height
- 9.02 mm
- Length
- 10.67 mm
- Transistor Type
- 1 N-Channel
- Width
- 4.83 mm
- Forward Transconductance - Min
- 325 mS
- Fall Time
- 20 ns
- Rise Time
- 15 ns
- Typical Turn-Off Delay Time
- 15 ns
- Typical Turn-On Delay Time
- 10 ns
- Unit Weight
- 0.211644 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.