Diodes Incorporated
DSM80101M-7
Bipolar Transistors - BJT PNP Trans Dual 400mW Switching -80V
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- DSM801
- Package
- SOT-26-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- NPN
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 300 mV
- Maximum DC Collector Current
- 500 mA
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 350 at 10 mA, 1 V
- Height
- 1.1 mm
- Length
- 3 mm
Show more parameters (4)
- Width
- 1.6 mm
- Continuous Collector Current
- 500 mA
- DC Collector/Base Gain hfe Min
- 120
- Pd - Power Dissipation
- 600 mW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.