ROHM Semiconductor
RV8C010UNHZGG2CR
MOSFETs MOSFET Nch, 20V(Vdss), 1.0A(Id), (1.2V, 1.5V Drive)
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- MOSFETs
- Package
- DFN-1010-3
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
21 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Id - Continuous Drain Current
- 1 A
- Rds On - Drain-Source Resistance
- 470 mOhms
- Vgs - Gate-Source Voltage
- - 8 V, 8 V
- Vgs th - Gate-Source Threshold Voltage
- 1 V
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 1 W
- Channel Mode
- Enhancement
Show more parameters (9)
- Configuration
- Single
- Country of Origin
- JP
- Fall Time
- 10 ns
- Forward Transconductance - Min
- 400 mS
- Rise Time
- 15 ns
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 15 ns
- Typical Turn-On Delay Time
- 5 ns
- Part # Aliases
- RV8C010UNHZG
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.