Wolfspeed / Cree
C2M0280120D
MOSFET SIC MOSFET 1200V RDS ON 280 mOhm
Basic Information
View Datasheet ↗- Manufacturer
- Cree, Inc.
- Brand
- Wolfspeed / Cree
- Product Category
- MOSFET
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
22 parameters- Technology
- SiC
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 10 A
- Rds On - Drain-Source Resistance
- 280 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 2.8 V
- Vgs - Gate-Source Voltage
- 25 V
- Qg - Gate Charge
- 5.6 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 62.5 W
Show more parameters (10)
- Configuration
- Single
- Channel Mode
- Enhancement
- Tradename
- Z-FET
- Transistor Type
- 1 N-Channel
- Forward Transconductance - Min
- 2.8 S
- Fall Time
- 9.9 ns
- Rise Time
- 7.6 ns
- Typical Turn-Off Delay Time
- 10.8 ns
- Typical Turn-On Delay Time
- 5.2 ns
- Unit Weight
- 1.340411 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.