Wolfspeed / Cree
E3M0280090D
MOSFET 900V 280mOhms G3 SiC MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Cree, Inc.
- Brand
- Wolfspeed / Cree
- Product Category
- MOSFET
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
20 parameters- Technology
- SiC
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 900 V
- Id - Continuous Drain Current
- 11.5 A
- Rds On - Drain-Source Resistance
- 364 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1.7 V
- Vgs - Gate-Source Voltage
- 18 V, - 8 V
- Qg - Gate Charge
- 9.5 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 54 W
Show more parameters (8)
- Configuration
- Single
- Channel Mode
- Enhancement
- Transistor Type
- 1 N-Channel
- Forward Transconductance - Min
- 3.6 S
- Fall Time
- 7.5 ns
- Rise Time
- 10 ns
- Typical Turn-Off Delay Time
- 17.5 ns
- Typical Turn-On Delay Time
- 26 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.