Diodes Incorporated
DMN4800LSS-13
MOSFET N-CHAN ENHNCMNT MODE
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- MOSFET
- Series
- DMN48
- Package
- SO-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
22 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Id - Continuous Drain Current
- 8.6 A
- Rds On - Drain-Source Resistance
- 20 mOhms
- Vgs - Gate-Source Voltage
- 25 V
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 1.46 W
- Configuration
- Single
- Channel Mode
- Enhancement
Show more parameters (10)
- Height
- 1.5 mm
- Length
- 4.95 mm
- Product
- MOSFET Small Signal
- Transistor Type
- 1 N-Channel
- Width
- 3.95 mm
- Fall Time
- 4.5 ns
- Rise Time
- 4.5 ns
- Typical Turn-Off Delay Time
- 26.33 ns
- Typical Turn-On Delay Time
- 5.03 ns
- Unit Weight
- 0.002610 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.