IXYS
IXTT40N50L2
MOSFET 40 Amps 500V
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- MOSFET
- Series
- IXTT40N50
- Package
- TO-268-3
- Mounting Style
- SMD/SMT
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
23 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 500 V
- Id - Continuous Drain Current
- 40 A
- Rds On - Drain-Source Resistance
- 170 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 4.5 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 320 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 540 W
- Channel Mode
- Enhancement
Show more parameters (11)
- Tradename
- Linear L2
- Height
- 5.1 mm
- Length
- 14 mm
- Type
- Linear L2 Power MOSFET
- Width
- 16.05 mm
- Forward Transconductance - Min
- 11 S
- Fall Time
- 44 ns
- Rise Time
- 133 ns
- Typical Turn-Off Delay Time
- 127 ns
- Typical Turn-On Delay Time
- 50 ns
- Unit Weight
- 0.229281 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.