STMicroelectronics
STI18N65M2
MOSFET N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- MOSFET
- Series
- STI18N65M2
- Package
- TO-262-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
20 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Id - Continuous Drain Current
- 12 A
- Rds On - Drain-Source Resistance
- 275 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 2 V
- Vgs - Gate-Source Voltage
- 25 V
- Qg - Gate Charge
- 20 nC
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 110 W
- Configuration
- Single
Show more parameters (8)
- Channel Mode
- Enhancement
- Tradename
- MDmesh
- Transistor Type
- 1 N-Channel
- Fall Time
- 12.5 ns
- Rise Time
- 7.5 ns
- Typical Turn-Off Delay Time
- 46 ns
- Typical Turn-On Delay Time
- 11 ns
- Unit Weight
- 0.050717 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.