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Vishay Semiconductors

SIDR626EP-T1-RE3

MOSFETs PPAKSO8 N-CH 60V 50.8A

Basic Information

View Datasheet ↗
Manufacturer
Vishay
Brand
Vishay Semiconductors
Product Category
MOSFETs
Series
SIDR
Package
PowerPAK SO-8
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

14 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
4 V
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Channel Mode
Enhancement
Country of Origin
TW
Fall Time
20 ns
Rise Time
50 ns
Show more parameters (2)
Typical Turn-Off Delay Time
60 ns
Typical Turn-On Delay Time
48 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SIDR626EP-T1-RE3 Specifications and Datasheet | ChipSourceHub