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Wolfspeed / Cree

CGHV14500F

RF JFET Transistors GaN HEMT 1.2-1.4GHz, 500 Watt

Basic Information

View Datasheet ↗
Manufacturer
Cree, Inc.
Brand
Wolfspeed / Cree
Product Category
RF JFET Transistors
Package
440117
Mounting Style
Screw Mount
Packaging
Tube
RoHS
Compliant (source record)

Technical Specifications

15 parameters
Transistor Type
HEMT
Technology
GaN
Gain
17.1 dB
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
150 V
Vgs - Gate-Source Breakdown Voltage
- 10 V to 2 V
Id - Continuous Drain Current
36 A
Output Power
510 W
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 130 C
Configuration
Single
Operating Frequency
1.2 GHz to 1.4 GHz
Show more parameters (3)
Product
GaN HEMT
Development Kit
CGHV14500F-TB
Vgs th - Gate-Source Threshold Voltage
- 3 V

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

CGHV14500F Specifications and Datasheet | ChipSourceHub