ROHM Semiconductor
DTA123YE3TL
Digital Transistors PNP, SOT-416, R1R2 Leak Absorption Type Digital Transistor (Bias Resistor Built-in Transistor)
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Digital Transistors
- Package
- SOT-416-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
13 parameters- Configuration
- Single
- Transistor Polarity
- PNP
- Typical Input Resistor
- 2.2 kOhms
- Typical Resistor Ratio
- 4.5
- DC Collector/Base Gain hfe Min
- 33 at - 10 mA, - 5 V
- Maximum Operating Frequency
- 250 MHz
- Collector- Emitter Voltage VCEO Max
- - 300 mV
- Continuous Collector Current
- - 100 mA
- Pd - Power Dissipation
- 150 mW
- Maximum Operating Temperature
- + 150 C
- Country of Origin
- PH
- Emitter- Base Voltage VEBO
- - 3 V
Show more parameters (1)
- Output Voltage
- - 100 mV
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.