Nexperia
PSMN012-100YS,115
MOSFET N-CHANNEL 100V STD LEVEL MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- MOSFET
- Package
- LFPAK56-5
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
24 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 60 A
- Rds On - Drain-Source Resistance
- 12 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 2 V
- Vgs - Gate-Source Voltage
- 10 V
- Qg - Gate Charge
- 64 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 130 W
Show more parameters (12)
- Configuration
- Single
- Channel Mode
- Enhancement
- Height
- 1.1 mm
- Length
- 5 mm
- Transistor Type
- 1 N-Channel
- Type
- N-Channel 100V 12 mOhms Standard Level MOSFET in LFPAK
- Width
- 4.1 mm
- Fall Time
- 25 ns
- Rise Time
- 31 ns
- Typical Turn-Off Delay Time
- 52.5 ns
- Typical Turn-On Delay Time
- 23 ns
- Unit Weight
- 0.003002 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.