ChipSourceHub

ON Semiconductor

NSVIMD10AMT1G

Bipolar Transistors - Pre-Biased SURF MT BIASED RES XSTR

Basic Information

View Datasheet ↗
Manufacturer
ON Semiconductor
Product Category
Bipolar Transistors - Pre-Biased
Series
IMD10AMT1G
Package
SC-74R-6
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

11 parameters
Configuration
Dual
Transistor Polarity
NPN, PNP
Typical Resistor Ratio
0.01
DC Collector/Base Gain hfe Min
68
Continuous Collector Current
500 mA
Pd - Power Dissipation
285 mW
Maximum Operating Temperature
+ 150 C
Emitter- Base Voltage VEBO
5 V
Output Voltage
0.2 VDC, 4.9 VDC
Maximum DC Collector Current
500 mA
Qualification
AEC-Q101

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NSVIMD10AMT1G Specifications and Datasheet | ChipSourceHub