Infineon Technologies
IPP65R420CFD
MOSFET N-Ch 650V 8.7A TO220-3 CoolMOS CFD2
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Series
- CoolMOS CFD2
- Package
- TO-220-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
20 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Id - Continuous Drain Current
- 8.7 A
- Rds On - Drain-Source Resistance
- 420 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Vgs - Gate-Source Voltage
- 30 V
- Qg - Gate Charge
- 32 nC
- Pd - Power Dissipation
- 83.3 W
- Configuration
- Single
- Tradename
- CoolMOS
Show more parameters (8)
- Height
- 15.65 mm
- Length
- 10 mm
- Transistor Type
- 1 N-Channel
- Width
- 4.4 mm
- Fall Time
- 8 ns
- Rise Time
- 7 ns
- Part # Aliases
- IPP65R420CFDXKSA1 IPP65R42CFDXK SP000876824
- Unit Weight
- 0.211644 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.