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Toshiba

TK063Z60Z1,S1F

MOSFETs 600 V 0.063 Ohm N-ch MOSFET TO-247-4L(X) DTMOS

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Product Category
MOSFETs
Package
TO-247-4
Mounting Style
Through Hole
Packaging
Tube

Technical Specifications

19 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
600 V
Id - Continuous Drain Current
37 A
Rds On - Drain-Source Resistance
63 mOhms
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
4 V
Qg - Gate Charge
56 nC
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
242 W
Channel Mode
Enhancement
Show more parameters (7)
Configuration
Single
Country of Origin
CN
Fall Time
5 ns
Rise Time
22 ns
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
105 ns
Typical Turn-On Delay Time
55 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

TK063Z60Z1,S1F Specifications and Datasheet | ChipSourceHub