Infineon Technologies
IRFR3711TRPBF
MOSFET 20V 1 N-CH HEXFET 6.5mOhms 29nC
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Package
- TO-252-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Id - Continuous Drain Current
- 110 A
- Rds On - Drain-Source Resistance
- 8.5 mOhms
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 29 nC
- Pd - Power Dissipation
- 120 W
- Configuration
- Single
- Height
- 2.3 mm
- Length
- 6.5 mm
Show more parameters (4)
- Transistor Type
- 1 N-Channel
- Width
- 6.22 mm
- Part # Aliases
- SP001557028
- Unit Weight
- 0.139332 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.