ON Semiconductor
NTD5C446NT4G
MOSFET T6 40V SL DPAK
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- MOSFET
- Package
- DPAK-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
22 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 40 V
- Id - Continuous Drain Current
- 110 A
- Rds On - Drain-Source Resistance
- 2.9 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 2 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 34.3 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 66 W
Show more parameters (10)
- Configuration
- Single
- Channel Mode
- Enhancement
- Qualification
- AEC-Q101
- Transistor Type
- 1 N-Channel
- Forward Transconductance - Min
- 100 S
- Fall Time
- 17 ns
- Rise Time
- 62 ns
- Typical Turn-Off Delay Time
- 43 ns
- Typical Turn-On Delay Time
- 20 ns
- Unit Weight
- 0.007055 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.