Toshiba
SSM5N16FU,LF
MOSFET LowON Res MOSFET ID=0.1A VDSS=20V
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- MOSFET
- Series
- SSM5N16FU
- Package
- SOT-353-5
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Id - Continuous Drain Current
- 100 mA
- Rds On - Drain-Source Resistance
- 3 Ohms
- Vgs th - Gate-Source Threshold Voltage
- 600 mV
- Vgs - Gate-Source Voltage
- 10 V
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 200 mW
- Configuration
- Dual
- Channel Mode
- Enhancement
Show more parameters (4)
- Tradename
- MOSVI
- Forward Transconductance - Min
- 40 mS
- Typical Turn-Off Delay Time
- 125 ns
- Typical Turn-On Delay Time
- 70 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.