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Toshiba

RFM04U6P(TE12L,F)

RF MOSFET Transistors Radio-Freq PwrMOSFET N-Ch 2A 7W 16V

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Product Category
RF MOSFET Transistors
Series
RFM04
Package
PW-Mini-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

13 parameters
Transistor Polarity
N-Channel
Technology
Si
Id - Continuous Drain Current
2 A
Vds - Drain-Source Breakdown Voltage
16 V
Gain
13.3 dB
Output Power
4.3 W
Configuration
Single
Operating Frequency
470 MHz
Type
RF Power MOSFET
Pd - Power Dissipation
7 W
Vgs - Gate-Source Voltage
3 V
Vgs th - Gate-Source Threshold Voltage
0.7 V
Show more parameters (1)
Unit Weight
0.001764 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

RFM04U6P(TE12L,F) Specifications and Datasheet | ChipSourceHub